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p - c h a n n e l e n h a n c e m e n t m o d e m o s f e t w i t h s c h o t t k y d i o d e c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 2 - j a n . , 2 0 1 0 w w w . a n p e c . c o m . t w 1 a n p e c r e s e r v e s t h e r i g h t t o m a k e c h a n g e s t o i m p r o v e r e l i a b i l i t y o r m a n u f a c t u r a b i l i t y w i t h o u t n o t i c e , a n d a d v i s e c u s t o m e r s t o o b t a i n t h e l a t e s t v e r s i o n o f r e l e v a n t i n f o r m a t i o n t o v e r i f y b e f o r e p l a c i n g o r d e r s . a p m 2 8 0 7 q b m o s f e t - 2 0 v / - 2 . 3 a , r d s ( o n ) = 8 5 m w ( t y p . ) @ v g s = - 4 . 5 v r d s ( o n ) = 1 2 0 m w ( t y p . ) @ v g s = - 2 . 5 v s u p e r h i g h d e n s e c e l l d e s i g n r e l i a b l e a n d r u g g e d l e a d f r e e a n d g r e e n d e v i c e a v a i l a b l e ( r o h s c o m p l i a n t ) f e a t u r e s a p p l i c a t i o n s p o w e r m a n a g e m e n t i n n o t e b o o k c o m p u t e r , p o r t a b l e e q u i p m e n t a n d b a t t e r y p o w e r e d s y s t e m s p i n d e s c r i p t i o n o r d e r i n g a n d m a r k i n g i n f o r m a t i o n t o p v i e w o f t d f n 2 x 2 - 6 a p - c h a n n e l s b d s b d v f = 0 . 4 5 v ( t y p . ) @ i f = 5 0 0 m a . n o t e : a n p e c l e a d - f r e e p r o d u c t s c o n t a i n m o l d i n g c o m p o u n d s / d i e a t t a c h m a t e r i a l s a n d 1 0 0 % m a t t e t i n p l a t e t e r m i n a - t i o n f i n i s h ; w h i c h a r e f u l l y c o m p l i a n t w i t h r o h s . a n p e c l e a d - f r e e p r o d u c t s m e e t o r e x c e e d t h e l e a d - f r e e r e q u i r e m e n t s o f i p c / j e d e c j - s t d - 0 2 0 d f o r m s l c l a s s i f i c a t i o n a t l e a d - f r e e p e a k r e f l o w t e m p e r a t u r e . a n p e c d e f i n e s ? g r e e n ? t o m e a n l e a d - f r e e ( r o h s c o m p l i a n t ) a n d h a l o g e n f r e e ( b r o r c l d o e s n o t e x c e e d 9 0 0 p p m b y w e i g h t i n h o m o g e n e o u s m a t e r i a l a n d t o t a l o f b r a n d c l d o e s n o t e x c e e d 1 5 0 0 p p m b y w e i g h t ) . apm2807 handling code temperature range package code package code qb : tdfn2x2-6a operating junction temperature range c : -55 to 150 o c handling code tr : tape & reel assembly material g : halogen and lead free device apm2807 qb : m07x assembly material x - date code s (4) (3) d (5) g (6) c a (1) a nc d c g s c d a nc d c g s
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 2 - j a n . , 2 0 1 0 w w w . a n p e c . c o m . t w 2 a p m 2 8 0 7 q b a b s o l u t e m a x i m u m r a t i n g s ( t a = 2 5 c u n l e s s o t h e r w i s e n o t e d ) e l e c t r i c a l c h a r a c t e r i s t i c s ( t a = 2 5 c u n l e s s o t h e r w i s e n o t e d ) n o t e : *surface mounted on 1in 2 pad area, t 5sec. symbol parameter rating unit [mosfet] v dss drain - source voltage - 20 v gss gate - source voltage 10 v i d * continuous drain current - 2.3 i dm * 300 m s pulsed drain current v gs = - 4.5v - 7 a i s * diode continuous forward current - 1.4 a t j maximum junction te mperature 150 t stg storage temperature range - 55 to 150 c t a =25 c 1.45 p d * maximum power dissipation t a =100 c 0.55 w 1 in 2 pad 85 r q ja * thermal resistance - junction to ambient minimum foot print 180 c / w [sbd] v rrm repetitive peak reverse voltage 20 v v r dc blocking voltage 20 v steady state 1 a i f average rectified forward current t ?? 5s 2 a steady state 140 r q ja thermal resi stance - junction to ambient t ?? 5s 90 c / w apm 2807qb symbol parameter test condition s min. typ. max. unit [mosfet] static characteristics bv dss drain - source breakdown voltage v gs =0v, i ds = - 250 m a - 20 - - v v ds = - 16 v, v gs =0v - - - 1 i dss zero gate voltage drain current t j =85 c - - - 30 m a v gs(th) gate threshold voltage v ds =v gs , i ds = - 250 m a - 0.45 - 0.7 - 1 v i gss gate leakage current v gs = 10 v, v ds =0v - - 10 m a v gs = - 4.5v, i ds = - 2.3 a - 85 110 r ds(on) a drain - source on - state resistance v gs = - 2. 5v, i ds = - 2 a - 120 160 m w
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 2 - j a n . , 2 0 1 0 w w w . a n p e c . c o m . t w 3 a p m 2 8 0 7 q b apm 2807qb symbol parameter test condition s min. typ. max. unit [mosfet] diode characteristics v sd a diode forward voltage i sd = - 1.4 a, v gs =0v - - 0.7 - 1.3 v t rr reverse recovery time - 13.5 - ns q rr reverse recovery charge i d s = - 2.3 a, dl sd /dt = 100a/ m s - 4 - nc dynamic characteristics b c iss input capacitance - 400 - c oss output capacitance - 70 - c rss reverse transfer capacitance v gs =0v, v ds = - 10v, f requency =1.0mhz - 50 - pf t d(on) turn - on delay time - 6 13 t r turn - on rise time - 14 29 t d(off) turn - off delay time - 28 55 t f turn - off fall time v dd = - 10 v, r l = 10 w , i d s = - 1 a, v gen = - 4.5v , r g = 6 w - 20 39 ns gate charge characteristics b q g total gate charge - 4.5 6 q gs gate - source charge - 0.7 - q gd gate - dr ain charge v ds = - 10 v, v gs = - 4.5 v, i d s = - 2.3 a - 1.8 - nc [sbd] v r reverse voltage i r =0.5a 20 - - v v f1 i f =500ma - 0.45 - v v f2 forward voltage i f =500ma, t a =125 o c - 0.37 - v i r1 reverse current v r =10v - 2 10 m a i r2 reverse current v r =20v - 10 40 m a c b junction capacitance v r =10v, f req uency =1.0mhz - 14 - pf n o t e a : p u l s e t e s t ; p u l s e w i d t h 3 0 0 m s , d u t y c y c l e 2 %. n o t e b : g u a r a n t e e d b y d e s i g n , n o t s u b j e c t t o p r o d u c t i o n t e s t i n g . e l e c t r i c a l c h a r a c t e r i s t i c s ( c o n t . ) ( t a = 2 5 c u n l e s s o t h e r w i s e n o t e d )
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 2 - j a n . , 2 0 1 0 w w w . a n p e c . c o m . t w 4 a p m 2 8 0 7 q b t y p i c a l c h a r a c t e r i s t i c s p - c h a n n e l -i d - drain current (a) d r a i n c u r r e n t t j - j u n c t i o n t e m p e r a t u r e ( c ) s a f e o p e r a t i o n a r e a - v d s - d r a i n - s o u r c e v o l t a g e ( v ) t h e r m a l t r a n s i e n t i m p e d a n c e s q u a r e w a v e p u l s e d u r a t i o n ( s e c ) p o w e r d i s s i p a t i o n p tot - power (w) t j - j u n c t i o n t e m p e r a t u r e ( c ) -i d - drain current (a) normalized transient thermal resistance 0 20 40 60 80 100 120 140 160 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 t a =25 o c 0 20 40 60 80 100 120 140 160 0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 t a =25 o c,v g =-4.5v 1e-4 1e-3 0.01 0.1 1 10 100 1e-3 0.01 0.1 1 2 mounted on 1in 2 pad r q ja : 85 o c/w 0.01 0.02 0.05 0.1 0.2 single pulse duty = 0.5 0.01 0.1 1 10 100 0.01 0.1 1 10 20 rds(on) limit 1s t a =25 o c 10ms 300 m s 1ms 100ms dc
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 2 - j a n . , 2 0 1 0 w w w . a n p e c . c o m . t w 5 a p m 2 8 0 7 q b r ds(on) - on - resistance ( m w ) d r a i n - s o u r c e o n r e s i s t a n c e - i d - d r a i n c u r r e n t ( a ) t j - j u n c t i o n t e m p e r a t u r e ( c ) g a t e t h r e s h o l d v o l t a g e - v d s - d r a i n - s o u r c e v o l t a g e ( v ) -i d - drain current (a) o u t p u t c h a r a c t e r i s t i c s d r a i n - s o u r c e o n r e s i s t a n c e - v g s - g a t e - s o u r c e v o l t a g e ( v ) r ds(on) - on - resistance ( m w ) normalized threshold voltage t y p i c a l c h a r a c t e r i s t i c s ( c o n t . ) p - c h a n n e l 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 2 3 4 5 6 7 2v 1.5v v gs =2.5,3,4,5,6,7,8,9,10v 0 1 2 3 4 5 6 7 40 60 80 100 120 140 160 180 v gs =2.5v v gs =4.5v -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 i ds =-250 m a 1 2 3 4 5 6 7 8 9 10 50 60 70 80 90 100 110 120 130 140 i d =-2.3a
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 2 - j a n . , 2 0 1 0 w w w . a n p e c . c o m . t w 6 a p m 2 8 0 7 q b - v d s - d r a i n - s o u r c e v o l t a g e ( v ) d r a i n - s o u r c e o n r e s i s t a n c e normalized on resistance t j - j u n c t i o n t e m p e r a t u r e ( c ) c - capacitance (pf) - v s d - s o u r c e - d r a i n v o l t a g e ( v ) s o u r c e - d r a i n d i o d e f o r w a r d -i s - source current (a) c a p a c i t a n c e g a t e c h a r g e q g - g a t e c h a r g e ( n c ) -v gs - gate - source voltage (v) t y p i c a l c h a r a c t e r i s t i c s ( c o n t . ) p - c h a n n e l -50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 r on @t j =25 o c: 85m w v gs = -4.5v i ds = -2.3a 0.0 0.4 0.8 1.2 1.6 2.0 0.1 1 10 t j =150 o c t j =25 o c 0 4 8 12 16 20 0 50 100 150 200 250 300 350 400 450 500 550 600 frequency=1mhz crss coss ciss 0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v ds = -10v i ds = -2.3a
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 2 - j a n . , 2 0 1 0 w w w . a n p e c . c o m . t w 7 a p m 2 8 0 7 q b t y p i c a l c h a r a c t e r i s t i c s ( c o n t . ) s b d v f - f o r w a r d v o l t a g e ( v ) i f - forward current (a) i f - v f i r - v r v r - r e v e r s e v o l t a g e ( v ) i r - reverse current (a) c - v r v r - r e v e r s e v o l t a g e ( v ) c - capacitance (pf) 0.0 0.2 0.4 0.6 0.01 0.1 1 3 t a =125 o c 50 o c 100 o c 75 o c t a =25 o c 0 3 6 9 12 15 1e-7 1e-6 1e-5 1e-4 1e-3 0.01 0.1 125 o c 100 o c 75 o c 50 o c t a =25 o c 0 4 8 12 16 20 0 10 20 30 40 50 60 70 frequency=1mhz
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 2 - j a n . , 2 0 1 0 w w w . a n p e c . c o m . t w 8 a p m 2 8 0 7 q b p a c k a g e i n f o r m a t i o n t d f n 2 x 2 - 6 a s y m b o l min. max. 0.80 0.00 0.18 0.30 0.50 0.60 0.05 0.70 a a1 b d d2 e e2 e l millimeters a3 0.20 ref tdfn2x2-6a 0.30 0.45 0.90 0.008 ref min. max. inches 0.031 0.000 0.007 0.012 0.020 0.024 0.028 0.012 0.018 0.70 0.035 0.028 0.002 0.65 bsc 0.026 bsc 1.90 2.10 0.075 0.083 1.90 2.10 0.075 0.083 d 0.35 ref 0.014 ref d e a a1 a3 b e l e 2 pin 1 corner d d2
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 2 - j a n . , 2 0 1 0 w w w . a n p e c . c o m . t w 9 a p m 2 8 0 7 q b application a h t1 c d d w e1 f 178.0 ? 2.00 50 min. 8.4+2.00 - 0.00 13.0+0.50 - 0.20 1.5 min. 20.2 min. 8.0 ? 0.20 1.75 ? 0.10 3.50 ? 0.05 p 0 p1 p 2 d 0 d1 t a 0 b 0 k 0 tdfn2x2 - 6a 4.0 ? 0.10 4.0 ? 0.10 2.0 ? 0.05 1.5+0.10 - 0.00 1.5 min. 0.6+0.00 - 0.4 2.35 min 2.35 min 1.30 ? 0.20 (mm) c a r r i e r t a p e & r e e l d i m e n s i o n s package type unit quantity tdfn2x2 - 6a tape & reel 3000 h t1 a d a e 1 a b w f t p0 od0 b a0 p2 k0 b 0 section b-b section a-a od1 p1 d e v i c e s p e r u n i t
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 2 - j a n . , 2 0 1 0 w w w . a n p e c . c o m . t w 1 0 a p m 2 8 0 7 q b t a p i n g d i r e c t i o n i n f o r m a t i o n t d f n 2 x 2 - 6 a c l a s s i f i c a t i o n p r o f i l e user direction of feed
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 2 - j a n . , 2 0 1 0 w w w . a n p e c . c o m . t w 1 1 a p m 2 8 0 7 q b profile feature sn - pb eutectic assembly pb - free assembly preheat & soak temperature min (t smin ) temperature max (t smax ) time (t smin to t smax ) ( t s ) 100 c 150 c 60 - 120 seconds 150 c 200 c 60 - 1 2 0 seconds average ramp - up rate (t smax to t p ) 3 c/second ma x. 3 c/second max. liquidous temperature ( t l ) time at l iquidous (t l ) 183 c 60 - 150 seconds 217 c 60 - 150 seconds peak package body temperature (t p ) * see classification temp in table 1 see classification temp in table 2 time (t p ) ** within 5 c of the spec ified c lassification t emperature ( t c ) 2 0 ** seconds 3 0 ** seconds average r amp - down rate (t p to t smax ) 6 c/second max. 6 c/second max. time 25 c to p eak t emperature 6 minutes max. 8 minutes max. * tolerance for peak profile temperature (t p ) is defined a s a supplier minimum and a user maximum. ** tolerance for time at peak profile temperature (t p ) is defined as a supplier minimum and a user maximum. c l a s s i f i c a t i o n r e f l o w p r o f i l e s table 2. pb - free process ? classification temperatures (tc) package thickness volume mm 3 <350 volume mm 3 350 - 2000 volume mm 3 >2000 <1.6 mm 260 c 260 c 260 c 1.6 mm ? 2.5 mm 260 c 250 c 245 c 3 2.5 mm 250 c 245 c 245 c table 1. snpb eutectic process ? classification temperatures (tc) package thickness volume mm 3 <350 volume mm 3 3 350 <2.5 mm 235 c 22 0 c 3 2.5 mm 220 c 220 c r e l i a b i l i t y t e s t p r o g r a m test item method description solderability jesd - 22, b102 5 sec, 245 c holt jesd - 22, a108 1000 hrs, bias @ 125 c pct jesd - 22, a102 168 hrs, 100 % rh, 2atm , 121 c tct jesd - 22, a104 500 cycles, - 65 c~150 c
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 2 - j a n . , 2 0 1 0 w w w . a n p e c . c o m . t w 1 2 a p m 2 8 0 7 q b c u s t o m e r s e r v i c e anpec electronics corp. head office : no.6, dusing 1st road, sbip, hsin-chu, taiwan, r.o.c. tel : 886-3-5642000 fax : 886-3-5642050 taipei branch : 2f, no. 11, lane 218, sec 2 jhongsing rd., sindain city, taipei county 23146, taiwan tel : 886-2-2910-3838 fax : 886-2-2917-3838

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